Samsung has begun mass producing what it calls the industry’s first 4GB DRAM package based on the second-generation High Bandwidth Memory (HBM) 2 interface.
Samsung’s new HBM solution will be used in high-performance computing (HPC), advanced graphics, network systems and enterprise servers, and is said to offer DRAM performance that is “seven times faster than the current DRAM performance limit”.
This will apparently allow faster responsiveness for high-end computing tasks including parallel computing, graphics rendering and machine learning.
“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies,” said Samsung Electronics’ SVP of memory marketing, Sewon Chun.
“Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market.”
The 4GB HBM2 DRAM, which uses Samsung’s 20nm process technology and advanced HBM chip design, is specifically aimed at next-generation HPC systems and graphics cards.
“The 4GB HBM2 package is created by stacking a buffer die at the bottom and four 8Gb core dies on top. These are then vertically interconnected by TSV holes and microbumps,” explained Samsung.
“A single 8Gb HBM2 die contains over 5,000 TSV holes, which is more than 36 times that of an 8Gb TSV DDR4 die, offering a dramatic improvement in data transmission performance compared to typical wire-bonding based packages.”
Samsung’s new DRAM package features 256GBps of bandwidth, which is double that of an HBM1 DRAM package. This is equivalent to a more than seven-fold increase over the 36GBps bandwidth of a 4Gb GDDR5 DRAM chip, which has the fastest data speed per pin (9Gbps) among currently manufactured DRAM chips.
The firm’s 4GB HBM2 also enables enhanced power efficiency by doubling the bandwidth per watt over a 4Gb GDDR5-based solution, and embeds error-correcting code functionality to offer high reliability.
Samsung plans to produce an 8GB HBM2 DRAM package this year, and by integrating this into graphics cards the firm believes designers will be able to save more than 95 percent of space compared with using GDDR5 DRAM. This, Samsung said, will “offer more optimal solutions for compact devices that require high-level graphics computing capabilities”.
Samsung will increase production volume of its HBM2 DRAM over the course of the year to meet anticipated growth in market demand for network systems and servers. The firm will also expand its line-up of HBM2 DRAM solutions in a bid to “stay ahead in the high-performance computing market”.
Courtesy-TheInq
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