The Micron 1100 SSD is a more mainstream oriented SSD that will be based on Marvell’s 88SS1074 controller and Micron’s 384Gb 32-layer TLC NAND. Using a SATA 6Gbps interface and available in M.2 and 2.5-inch form-factors, the Micron 1100 should replace Micron’s mainstream M600 series, based on 16nm MLC NAND.

The Micron 1100 SSD will be available in 256GB, 512GB, 1TB and 2TB capacities. It will offer sequential performance of up to 530MB/s for read and up to 500MB/s for write with random 4K performance of up to 92K for read and up to 83K IOPS for write. With such performance, it is obvious that the Micron 1100 series will target mainstream market and be a budget SSD.

The Micron 2100 is an M.2 PCIe NVMe SSD that is actually Micron’s first client oriented PCIe SSD and also the first PCIe SSD based on 3D NAND. Unfortuantely, Micron did not finalize the precise specifications so we still do not have precise performance numbers but it will be available in capacities reaching 1TB.

The Micron 1100 is expected to hit mass production in July so we should expect some of the first drives by the end of the next month. The Micron 2100 will be coming by the end of summer.

Courtesy-Fud

The Samsung PM971 built using the company’s Photon controller and runs MLC 3D V-NAND (contrary to the picture above, PC Watch claims it is actually 3-bits per cell). The drive will be available in 128GB, 256GB and 512GB storage capacities and will feature sequential reads up to 1,500MB/s, sequential writes up to 600MB/s, random reads up to 190,000 IOPS and random writes up to 150,000 IOPS.In general, SSDs with BGA packaging are considerably smaller than those using the M.2 form factor, and Intel has claimed that using a PCI-E BGA SSD could allow an increase in battery size by around 10-percent compared to using an M.2 2260 SSD (with GPIO using 1.8v power rail instead of 3.3v), lower thermals than M.2 (from BGA ball conduction to motherboard instead of through M.2 mounting screws), and a vertical height savings of 0.5mm to 1.5mm in notebook devices.

The nice thing about BGA SSDs is that they are “complete” storage solutions and integrate NAND flash memory, the NAND controller and DRAM all into a single package. Currently, there are several BGA M.2 form factors being proposed that will make single-chip SSDs a reality sooner than later as the result of a collaboration between HP, Intel, Lenovo, Micron, SanDisk, Seagate and Toshiba. The four BGA SSD packages proposed are Type 1620, Type 2024, Type 2228 and Type 2828, ranging anywhere between 16 x 20 millimeters and 28 x 28 millimeters with up to 2-millimeter vertical height. It is currently unknown whether the Samsung PM971 adopts any of these proposed BGA M.2 standards.

Based on the demonstration at the 2016 Samsung SSD Forum in Japan, the PM971 offers decent performance thanks to a PCI-E 3.0 x4 interface and the company’s new Photon controller. According to the PC Watch website, the drive is physically smaller than an SD card and Samsung expects device manufacturers and OEMs to begin adoption in the second half of 2016 or the first half of 2017.

Courtesy-Fud

Samsung’s new HBM solution will be used in high-performance computing (HPC), advanced graphics, network systems and enterprise servers, and is said to offer DRAM performance that is “seven times faster than the current DRAM performance limit”.

This will apparently allow faster responsiveness for high-end computing tasks including parallel computing, graphics rendering and machine learning.

“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies,” said Samsung Electronics’ SVP of memory marketing, Sewon Chun.

“Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market.”

The 4GB HBM2 DRAM, which uses Samsung’s 20nm process technology and advanced HBM chip design, is specifically aimed at next-generation HPC systems and graphics cards.

“The 4GB HBM2 package is created by stacking a buffer die at the bottom and four 8Gb core dies on top. These are then vertically interconnected by TSV holes and microbumps,” explained Samsung.

“A single 8Gb HBM2 die contains over 5,000 TSV holes, which is more than 36 times that of an 8Gb TSV DDR4 die, offering a dramatic improvement in data transmission performance compared to typical wire-bonding based packages.”

Samsung’s new DRAM package features 256GBps of bandwidth, which is double that of an HBM1 DRAM package. This is equivalent to a more than seven-fold increase over the 36GBps bandwidth of a 4Gb GDDR5 DRAM chip, which has the fastest data speed per pin (9Gbps) among currently manufactured DRAM chips.

The firm’s 4GB HBM2 also enables enhanced power efficiency by doubling the bandwidth per watt over a 4Gb GDDR5-based solution, and embeds error-correcting code functionality to offer high reliability.

Samsung plans to produce an 8GB HBM2 DRAM package this year, and by integrating this into graphics cards the firm believes designers will be able to save more than 95 percent of space compared with using GDDR5 DRAM. This, Samsung said, will “offer more optimal solutions for compact devices that require high-level graphics computing capabilities”.

Samsung will increase production volume of its HBM2 DRAM over the course of the year to meet anticipated growth in market demand for network systems and servers. The firm will also expand its line-up of HBM2 DRAM solutions in a bid to “stay ahead in the high-performance computing market”.

Courtesy-TheInq