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New USB Chip Developed
October 18, 2013 by admin
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Silicon Motion says it has begun shipping samples of a new USB 3.0 controller chip for flash drives that could boost performance by up to 50%.
The company said the new SM3267 integrated controller is expected to deliver up to 160MB/s read, and 60MB/s write speeds through a single channel; that would be a 30% to 50% performance improvement over today’s USB 3.0 flash drive technology.
Even though the USB 3.0 specification has the capability to support 4.8Gbps throughput speeds, the speed of a USB 3.0-enabled flash drive is dictated by the speed of the accessing flash devices in the drive. Today, most consumer-USB 3.0 flash drives support about 100MB/s read speeds.
We are pleased to announce that SM3267 has received design-ins from most of our current USB controller customers, including many top-tier OEMs, and we expect SM3267-based USB 3.0 flash drives will be commercially available starting in the fourth quarter of 2013,” Wallace Kou, CEO of Silicon Motion, said in a statement.
The new integrated chip will also be able to run at lower voltages, from 5 volts to 1.2 volts, enabling a 25% to 30% lower USB flash drive device temperature compared with other USB 3.0 flash controller products in the market, Silicon Motion said.
The new IC will support the vast majority of NAND flash technology, including new triple-level cell (TLC), multi-level cell (MLC), high speed Toggle, and ONFI DDR NAND manufactured by Samsung, Toshiba, SanDisk, SK Hynix, Micron and Intel.
The new chip has already passed both USB-IF compliance testing and WHCK (Windows Hardware Certification Kit) tests for Windows 7 and Windows 8.
The new IC is available in a Chip-on-Board (COB) and in a 48-pin QFN green package.
New MacBook Includes Faster NAND Chip
The soon to be released new version of Apple’s MacBook Air, will feature NAND flash memory with up to 400Mbps performance, about one and a half times faster than its current technology, according to a recent report.
Unlike many notebooks, the MacBook Air has no hard drive or optical drive and instead uses a slim flash board for its internal mass storage device.
Citing an “Asian electronics component company person,” the blog site Macotakara stated that Apple will use flash memory chips that includes the new Double Data Rate (DDR) 2.0 interface. While the rumors could not be confirmed, the upgrade would come as no surprise, since Apple’s next MacBook Air, which originally used Toshiba’s Blade X-gale NAND flash board, has moved to using Samsung’s flash memory. The MacBook Air’s current Samsung flash sports read rates of 261Mbps and write rates of up to 209Mbps and is based on DDR 1.0 technology.
DDR 2.0 provides a tenfold increase over the 40Mbps Single Data Rate (SDR) NAND flash in widespread use today.
In May, Samsung announced that it was producing DDR 2.0 multilevel cell flash chips. Samsung’s flash chips are made using its smallest circuitry, only 20 nanometers wide. The chips boast a performance improvement of three times over its previous technology.
DDR NAND flash comes in two forms: Toggle Mode from Samsung and Toshiba; and ONFI NAND, from the Open NAND Flash Interface (ONFI) working group. The ONFI protocol is used by flash manufacturers, including Intel, Micron, SanDisk, Hynix and Spansion. In March, the ONFI working group announced its 3.0 specification for the DDR 2.0 interface, which also has up to 400Mbps throughput but with only half the number of pins, for a significant reduction in size.