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Hitachi-LG Executives Plead Guilty
December 19, 2011 by admin
Filed under Consumer Electronics
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Three executives at Hitachi-LG Data Storage (HLDS) have agreed to plead guilty and serve prison time in the U.S. for their participation in a number of conspiracies to rig bids and fix the prices of optical disk drives sold to large computer manufacturers, the U.S. Department of Justice announced Tuesday.
Young Keun Park, Sang Hun Kim and Sik “Daniel” Hur conspired with others to suppress competition by rigging bids for optical disk drives sold to Dell and Hewlett-Packard and to fix prices for optical disk drives sold to Microsoft, the DOJ said. The conspiracies happened at various times between November 2005 and September 2009, the DOJ said.
Under a plea agreement in U.S. District Court for the Northern District of California, Park and Kim each have agreed to serve eight months in prison and Hur has agreed to serve seven months in prison. Each has also agreed to pay a US$25,000 fine.
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New MacBook Includes Faster NAND Chip
The soon to be released new version of Apple’s MacBook Air, will feature NAND flash memory with up to 400Mbps performance, about one and a half times faster than its current technology, according to a recent report.
Unlike many notebooks, the MacBook Air has no hard drive or optical drive and instead uses a slim flash board for its internal mass storage device.
Citing an “Asian electronics component company person,” the blog site Macotakara stated that Apple will use flash memory chips that includes the new Double Data Rate (DDR) 2.0 interface. While the rumors could not be confirmed, the upgrade would come as no surprise, since Apple’s next MacBook Air, which originally used Toshiba’s Blade X-gale NAND flash board, has moved to using Samsung’s flash memory. The MacBook Air’s current Samsung flash sports read rates of 261Mbps and write rates of up to 209Mbps and is based on DDR 1.0 technology.
DDR 2.0 provides a tenfold increase over the 40Mbps Single Data Rate (SDR) NAND flash in widespread use today.
In May, Samsung announced that it was producing DDR 2.0 multilevel cell flash chips. Samsung’s flash chips are made using its smallest circuitry, only 20 nanometers wide. The chips boast a performance improvement of three times over its previous technology.
DDR NAND flash comes in two forms: Toggle Mode from Samsung and Toshiba; and ONFI NAND, from the Open NAND Flash Interface (ONFI) working group. The ONFI protocol is used by flash manufacturers, including Intel, Micron, SanDisk, Hynix and Spansion. In March, the ONFI working group announced its 3.0 specification for the DDR 2.0 interface, which also has up to 400Mbps throughput but with only half the number of pins, for a significant reduction in size.