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Intel Reveals 750 Series SSD
During the 3D Revolution 2014 presentation held in Rome, Intel has showed its updated SSD roadmap unveiling the new August Ridge SSD 750 Series which will be available in multiple form-factors, including lately popular M.2.
Spotted by Techpowerup.com, the Intel SSD 750 Series will be aimed at both the consumer and the professional market segments and be available in three form-factors, including 2.5-inch SATA 6Gbps, mSATA 6Gbps as well as the M.2 form-factor.
The new 750 SSD Series will most likely be available in all the popular capacities, up to 960GB, and be based on 20nm MLC NAND flash.
Unfortunately, the roadmap does not reveal many details regarding the performance of the SSD 750 Series but does note that it should launch in Q4 2014.
Intel Launches 530 Series SSD
Intel’s new SSD 530 series was detailed a while ago, but now it is finally official. Intel has formally announced the new drives in three form factors: mSATA, M.2 and 2.5-inch.
The drives will be available in a wide range of capacities, starting at 80GB, through 120GB, 180GB, 240GB, 360GB and 480GB for 2.5-inch drives. As for M.2 and mSATA drives, they will be available in 80GB, 120GB, 180GB and 360GB capacities.
Intel’s new 530 drives are based on 20nm MLC flash and the brains behind the brawn come from LSI, in the form of the SandForce SF-2281 controller. Although transfer speeds will vary depending on capacity, the fastest 530-series drives will deliver read speeds of up to 540MB/s and write at 490MB/s. As for random performance, they boast 41k IOPS in random read and 80k IOPS in random write.
Intel also says the 530-series is its most power efficient storage product to date, which is hardly surprising, but it is good news for notebook vendors who will use mSATA units.
IBM’s Next-gen Transistors Mimick Human Brain
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IBM has discovered a way to make transistors that could be turned into virtual circuitry that mimics how the human brain operates.
The new transistors would be made from strongly correlated materials, such as metal oxides, which researchers say can be used to build more powerful — but less power-hungry — computation circuitry.
“The scaling of conventional-based transistors is nearing an end, after a fantastic run of 50 years,” said Stuart Parkin, an IBM fellow at IBM Research. “We need to consider alternative devices and materials that operate entirely differently.”
Researchers have been trying to find ways of changing conductivity states in strongly correlated materials for years. Parkin’s team is the first to convert metal oxides from an insulated to conductive state by applying oxygen ions to the material. The team recently published details of the work in the journal Science.
In theory, such transistors could mimic how the human brain operates in that “liquids and currents of ions [would be used] to change materials,” Parkin said, noting that “brains can carry out computing operations a million times more efficiently than silicon-based computers.”